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- Manufacturer No：BC857BWH6327XTSA1
- Manufacturer：Infineon
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BC857BWH6327XTSA1
- SKU：2642512
- Description：Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323-3
User Guide
User Guide
BC857BWH6327XTSA1 Details
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323-3
BC857BWH6327XTSA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Terminations: 3
- Collector Base Voltage (VCBO): 50V
- Max Power Dissipation: 250mW
- Published: 2011
- Length: 2mm
- Element Configuration: Single
- Width: 1.25mm
- Max Collector Current: 100mA
- Halogen Free: Halogen Free
- Transition Frequency: 250MHz
- Polarity/Channel Type: PNP
- Collector Emitter Breakdown Voltage: 45V
- Package / Case: SC-70, SOT-323
- Current - Collector Cutoff (Max): 15nA ICBO
- Collector Emitter Saturation Voltage: 650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Contact Plating: Tin
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Terminal Form: GULL WING
- Power Dissipation: 250mW
- Factory Lead Time: 4 Weeks
- Transistor Element Material: SILICON
- Part Status: Not For New Designs
- Height: 800μm
- Current - Collector (Ic) (Max): 100mA
- Frequency: 250MHz
- Transistor Type: PNP
- Operating Temperature: 150°C TJ
- Transistor Application: AMPLIFIER
- Additional Feature: LOW NOISE
- Collector Emitter Voltage (VCEO): 650mV
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Base Part Number: BC857
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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