BSB012N03LX3 GInfineon
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    BSB012N03LX3 G123
    • Manufacturer No：
      BSB012N03LX3 G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2646435
    • Description：
      N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M?
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    Inventory:5
    • Qty Unit Price price
    • 1 $1.055 $1.055
    • 10 $1.044 $10.44
    • 100 $1.033 $103.3
    • 1000 $1.022 $1022
    • 10000 $1.011 $10110

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    BSB012N03LX3 G
    • Manufacturer No：
      BSB012N03LX3 G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSB012N03LX3 G
    • SKU：
      2646435
    • Description：
      N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M?

    User Guide

    User Guide

    BSB012N03LX3 G Details

    N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M?

    BSB012N03LX3 G Specification Parameters

    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Part Status: Obsolete
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • Terminal Position: BOTTOM
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • HTS Code: 8541.29.00.95
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Avalanche Energy Rating (Eas): 290 mJ
    • Drain-source On Resistance-Max: 0.0012Ohm
    • JESD-30 Code: R-MBCC-N3
    • Rds On (Max) @ Id, Vgs: 1.2m Ω @ 30A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 15V
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Published: 2009
    • Reach Compliance Code: compliant
    • DS Breakdown Voltage-Min: 30V
    • Terminal Form: NO LEAD
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 400A
    • Series: OptiMOS?
    • Drain Current-Max (Abs) (ID): 39A
    • Power Dissipation-Max: 2.8W Ta 89W Tc
    • Package / Case: 3-WDSON
    • Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 39A Ta 180A Tc
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    Infineon
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