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- Manufacturer No：BSC019N04LSATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSC019N04LSATMA1
- SKU：2640235
- Description：MOSFET N-CH 40V 27A 8TDSON
User Guide
User Guide
BSC019N04LSATMA1 Details
MOSFET N-CH 40V 27A 8TDSON
BSC019N04LSATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Min Operating Temperature: -55°C
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Drain to Source Voltage (Vdss): 40V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Factory Lead Time: 26 Weeks
- Continuous Drain Current (ID): 100A
- Rise Time: 4ns
- Package / Case: 8-PowerTDFN
- Drain to Source Resistance: 1.5mOhm
- Input Capacitance: 2.9nF
- Supplier Device Package: PG-TDSON-8-1
- Current - Continuous Drain (Id) @ 25°C: 27A Ta 100A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 20V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Pins: 8
- Published: 2012
- Gate to Source Voltage (Vgs): 20V
- Max Dual Supply Voltage: 40V
- FET Type: N-Channel
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: OptiMOS?
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Power Dissipation-Max: 2.5W Ta 78W Tc
- Rds On Max: 1.9 mΩ
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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