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BSC042N03LSGATMA1123
Inventory:6517
  • Qty Unit Price price
  • 1 $1.044 $1.044
  • 10 $1.033 $10.33
  • 100 $1.022 $102.2
  • 1000 $1.011 $1011
  • 10000 $1 $10000

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BSC042N03LSGATMA1
  • Manufacturer No:
    BSC042N03LSGATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSC042N03LSGATMA1
  • SKU:
    2675399
  • Description:
    Trans MOSFET N-CH 30V 93A 8-Pin TDSON

BSC042N03LSGATMA1 Details

Trans MOSFET N-CH 30V 93A 8-Pin TDSON

BSC042N03LSGATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 8
  • Pin Count: 8
  • Pbfree Code: no
  • Qualification Status: Not Qualified
  • Reach Compliance Code: not_compliant
  • Gate to Source Voltage (Vgs): 20V
  • Drain Current-Max (Abs) (ID): 20A
  • Terminal Form: FLAT
  • Technology: MOSFET (Metal Oxide)
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Series: OptiMOS?
  • Factory Lead Time: 39 Weeks
  • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Power Dissipation: 57W
  • Avalanche Energy Rating (Eas): 50 mJ
  • Pulsed Drain Current-Max (IDM): 372A
  • Rds On (Max) @ Id, Vgs: 4.2m Ω @ 30A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 20A Ta 93A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Lead Free: Contains Lead
  • Published: 2011
  • Transistor Element Material: SILICON
  • Max Dual Supply Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Package / Case: 8-PowerTDFN
  • Vgs(th) (Max) @ Id: 2.2V @ 250μA
  • Continuous Drain Current (ID): 93A
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Drain-source On Resistance-Max: 0.0065Ohm
  • Rise Time: 4.4ns
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
  • Power Dissipation-Max: 2.5W Ta 57W Tc

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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