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- Manufacturer No：BSC0911NDATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：BSC0911NDATMA1
- SKU：2675556
- Description：Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 18A, 30A 1W Surface Mount PG-TISON-8
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User Guide
BSC0911NDATMA1 Details
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 18A, 30A 1W Surface Mount PG-TISON-8
BSC0911NDATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Published: 2013
- Number of Terminations: 6
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Packaging: Cut Tape (CT)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PDSO-N6
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 4 ns
- Package / Case: 8-PowerTDFN
- Rise Time: 5.4ns
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- FET Feature: Logic Level Gate, 4.5V Drive
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pbfree Code: no
- Max Power Dissipation: 1W
- Drain to Source Breakdown Voltage: 25V
- Factory Lead Time: 18 Weeks
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 30A
- Subcategory: FET General Purpose Power
- Power Dissipation: 2.5W
- Turn-Off Delay Time: 25 ns
- Series: OptiMOS?
- Vgs(th) (Max) @ Id: 2V @ 250μA
- FET Type: 2 N-Channel (Dual) Asymmetrical
- Case Connection: DRAIN SOURCE
- Rds On (Max) @ Id, Vgs: 3.2m Ω @ 20A, 10V
- Current - Continuous Drain (Id) @ 25°C: 18A 30A
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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