BSC12DN20NS3GATMA1Infineon
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    Inventory:10000
    • Qty Unit Price price
    • 1 $0.646 $0.646
    • 10 $0.639 $6.39
    • 100 $0.632 $63.2
    • 1000 $0.625 $625
    • 10000 $0.618 $6180

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    BSC12DN20NS3GATMA1
    • Manufacturer No：
      BSC12DN20NS3GATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSC12DN20NS3GATMA1
    • SKU：
      2674768
    • Description：
      N-KAN

    User Guide

    User Guide

    BSC12DN20NS3GATMA1 Details

    N-KAN

    BSC12DN20NS3GATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Pin Count: 8
    • Pbfree Code: no
    • Qualification Status: Not Qualified
    • Max Dual Supply Voltage: 200V
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Gate to Source Voltage (Vgs): 20V
    • Terminal Form: FLAT
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Factory Lead Time: 26 Weeks
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Turn-Off Delay Time: 10 ns
    • Turn On Delay Time: 6 ns
    • JESD-30 Code: R-PDSO-F5
    • Series: OptiMOS?
    • Continuous Drain Current (ID): 11.3A
    • Avalanche Energy Rating (Eas): 60 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
    • Rds On (Max) @ Id, Vgs: 125m Ω @ 5.7A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Lead Free: Contains Lead
    • Number of Terminations: 5
    • Published: 2010
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Pulsed Drain Current-Max (IDM): 45A
    • Rise Time: 4 ns
    • Fall Time (Typ): 3 ns
    • Package / Case: 8-PowerTDFN
    • Power Dissipation-Max: 50W Tc
    • Drain-source On Resistance-Max: 0.125Ohm
    • Vgs(th) (Max) @ Id: 4V @ 25μA
    • Current - Continuous Drain (Id) @ 25°C: 11.3A Tc
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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