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- Manufacturer No：BSC152N10NSFGATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSC152N10NSFGATMA1
- SKU：2644112
- Description：Trans MOSFET N-CH 100V 9.4A 8-Pin TDSON EP
User Guide
User Guide
BSC152N10NSFGATMA1 Details
Trans MOSFET N-CH 100V 9.4A 8-Pin TDSON EP
BSC152N10NSFGATMA1 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Pin Count: 8
- Pbfree Code: no
- Drain to Source Voltage (Vdss): 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ): 6 ns
- Turn On Delay Time: 14 ns
- Series: OptiMOS?
- Continuous Drain Current (ID): 9.4A
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Power Dissipation-Max: 114W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V
- Rds On (Max) @ Id, Vgs: 15.2m Ω @ 25A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Published: 2008
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- JESD-30 Code: R-PDSO-F5
- Turn-Off Delay Time: 22 ns
- Package / Case: 8-PowerTDFN
- Rise Time: 24ns
- Power Dissipation: 114W
- Pulsed Drain Current-Max (IDM): 252A
- Current - Continuous Drain (Id) @ 25°C: 9.4A Ta 63A Tc
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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