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BSP296NH6327XTSA1123
  • Manufacturer No:
    BSP296NH6327XTSA1
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2673112
  • Description:
    Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
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BSP296NH6327XTSA1
  • Manufacturer No:
    BSP296NH6327XTSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSP296NH6327XTSA1
  • SKU:
    2673112
  • Description:
    Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R

BSP296NH6327XTSA1 Details

Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R

BSP296NH6327XTSA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Factory Lead Time: 10 Weeks
  • Drain to Source Breakdown Voltage: 100V
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Halogen Free: Halogen Free
  • Length: 6.5mm
  • Continuous Drain Current (ID): 1.2A
  • Case Connection: DRAIN
  • Threshold Voltage: 1.4V
  • Power Dissipation: 1.8W
  • Turn On Delay Time: 3.5 ns
  • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Power Dissipation-Max: 1.8W Ta
  • Turn-Off Delay Time: 18.4 ns
  • Weight: 250.212891mg
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 4
  • Published: 2013
  • Terminal Form: GULL WING
  • Max Dual Supply Voltage: 100V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Width: 3.5mm
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Height: 1.8mm
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Package / Case: TO-261-4, TO-261AA
  • Series: OptiMOS?
  • Rise Time: 7.9 ns
  • Drain-source On Resistance-Max: 0.6Ohm
  • Manufacturer Package Identifier: PG-SOT223-4
  • Fall Time (Typ): 21.4 ns
  • Current - Continuous Drain (Id) @ 25°C: 1.2A Ta
  • Vgs(th) (Max) @ Id: 1.8V @ 100μA
  • Rds On (Max) @ Id, Vgs: 600m Ω @ 1.2A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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