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BSP299H6327XUSA1123
  • Manufacturer No:
    BSP299H6327XUSA1
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2651137
  • Description:
    Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
  • Quantity:
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Inventory:10187
  • Qty Unit Price price
  • 1 $0.635 $0.635
  • 10 $0.628 $6.28
  • 100 $0.621 $62.1
  • 1000 $0.614 $614
  • 10000 $0.607 $6070

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BSP299H6327XUSA1
  • Manufacturer No:
    BSP299H6327XUSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSP299H6327XUSA1
  • SKU:
    2651137
  • Description:
    Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R

BSP299H6327XUSA1 Details

Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R

BSP299H6327XUSA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Factory Lead Time: 10 Weeks
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Published: 2009
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Max Dual Supply Voltage: 500V
  • Part Status: Last Time Buy
  • FET Type: N-Channel
  • Width: 3.5mm
  • Power Dissipation: 1.5W
  • Length: 6.5mm
  • Continuous Drain Current (ID): 400mA
  • Rise Time: 15 ns
  • Fall Time (Typ): 30 ns
  • Package / Case: TO-261-4, TO-261AA
  • Turn-Off Delay Time: 55 ns
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Power Dissipation-Max: 1.8W Ta
  • Current - Continuous Drain (Id) @ 25°C: 400mA Ta
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 4
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Height: 1.6mm
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 500V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Halogen Free: Halogen Free
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Drain-source On Resistance-Max: 4Ohm
  • Turn On Delay Time: 8 ns
  • Additional Feature: AVALANCHE RATED
  • Nominal Vgs: 3 V
  • Series: SIPMOS?
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Rds On (Max) @ Id, Vgs: 4 Ω @ 400mA, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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