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- Manufacturer No：BSP322PL6327HTSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSP322PL6327HTSA1
- SKU：3645713
- Description：P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4
User Guide
User Guide
BSP322PL6327HTSA1 Details
P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4
BSP322PL6327HTSA1 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Published: 2012
- Max Operating Temperature: 150°C
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: TO-261-4, TO-261AA
- Turn On Delay Time: 4.6 ns
- Rds On Max: 800 mΩ
- Fall Time (Typ): 8.3 ns
- Current - Continuous Drain (Id) @ 25°C: 1A Tc
- Rise Time: 4.3ns
- Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Drain to Source Voltage (Vdss): 100V
- Continuous Drain Current (ID): 1A
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- FET Type: P-Channel
- Power Dissipation: 1.8W
- Series: SIPMOS?
- Power Dissipation-Max: 1.8W Ta
- Supplier Device Package: PG-SOT223-4
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Turn-Off Delay Time: 21.2 ns
- Vgs(th) (Max) @ Id: 1V @ 380μA
- Input Capacitance: 372pF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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