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BSS159N E6906123
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BSS159N E6906
  • Manufacturer No:
    BSS159N E6906
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSS159N E6906
  • SKU:
    2675129
  • Description:
    MOSFET N-CH 60V 230MA SOT-23

BSS159N E6906 Details

MOSFET N-CH 60V 230MA SOT-23

BSS159N E6906 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Surface Mount: YES
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Drain to Source Voltage (Vdss): 60V
  • Published: 2006
  • Reach Compliance Code: compliant
  • Terminal Finish: MATTE TIN
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • HTS Code: 8541.21.00.95
  • FET Feature: Depletion Mode
  • Power Dissipation-Max: 360mW Ta
  • Current - Continuous Drain (Id) @ 25°C: 230mA Ta
  • Vgs(th) (Max) @ Id: 2.4V @ 26μA
  • Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Pin Count: 3
  • Terminal Form: GULL WING
  • DS Breakdown Voltage-Min: 60V
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JESD-30 Code: R-PDSO-G3
  • Series: SIPMOS?
  • Drain Current-Max (Abs) (ID): 0.23A
  • Drive Voltage (Max Rds On,Min Rds On): 0V 10V
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Rds On (Max) @ Id, Vgs: 3.5 Ω @ 160mA, 10V
  • Feedback Cap-Max (Crss): 5.9 pF

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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