FF200R12KT3HOSA1Infineon
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    FF200R12KT3HOSA1
    • Manufacturer No：
      FF200R12KT3HOSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
      FF200R12KT3HOSA1
    • SKU：
      2657190
    • Description：
      IGBT MODULE 1200V 1050W

    User Guide

    User Guide

    FF200R12KT3HOSA1 Details

    IGBT MODULE 1200V 1050W

    FF200R12KT3HOSA1 Specification Parameters

    • Part Status: Active
    • Number of Elements: 2
    • ECCN Code: EAR99
    • NTC Thermistor: No
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Operating Temperature: -40°C~125°C
    • Pin Count: 7
    • Mount: Screw
    • Case Connection: ISOLATED
    • Terminal Form: UNSPECIFIED
    • Polarity/Channel Type: N-CHANNEL
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • IGBT Type: Trench Field Stop
    • Turn Off Time-Nom (toff): 680 ns
    • Turn On Time: 215 ns
    • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Mounting Type: Chassis Mount
    • Element Configuration: Dual
    • Input: Standard
    • Number of Terminations: 7
    • Number of Pins: 7
    • Package / Case: Module
    • Current - Collector Cutoff (Max): 5mA
    • Terminal Position: UPPER
    • Collector Emitter Voltage (VCEO): 1.2kV
    • Transistor Application: POWER CONTROL
    • Configuration: 2 Independent
    • Power - Max: 1050W
    • Input Capacitance (Cies) @ Vce: 14nF @ 25V
    • Max Collector Current: 295A
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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