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- Manufacturer No：FZ600R12KE3
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Modules
- Datasheet：FZ600R12KE3
- SKU：10978167
- Description：INFINEON FZ600R12KE3 IGBT Array & Module Transistor, N Channel, 900 A, 2.15 V, 2.8 kW, 1.2 kV, Module
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User Guide
FZ600R12KE3 Details
INFINEON FZ600R12KE3 IGBT Array & Module Transistor, N Channel, 900 A, 2.15 V, 2.8 kW, 1.2 kV, Module
FZ600R12KE3 Specification Parameters
- Surface Mount: NO
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminals: 3
- Pin Count: 5
- Transistor Element Material: SILICON
- Gate-Emitter Voltage-Max: 20V
- Terminal Form: UNSPECIFIED
- Terminal Position: UPPER
- Pbfree Code: icon-pbfree yes
- Transistor Application: POWER CONTROL
- Turn On Time: 400 ns
- JESD-30 Code: R-XUFM-X3
- Turn Off Time-Nom (toff): 830 ns
- Number of Elements: 1
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Qualification Status: Not Qualified
- Operating Temperature (Max): 175°C
- Reach Compliance Code: compliant
- Case Connection: ISOLATED
- Configuration: SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL
- Collector-Emitter Voltage-Max: 1200V
- Subcategory: Insulated Gate BIP Transistors
- Collector Current-Max (IC): 900A
- VCEsat-Max: 2.15 V
- Power Dissipation-Max (Abs): 2750W
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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