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HYB25D256160CT-6123
  • Manufacturer No:
    HYB25D256160CT-6
  • Manufacturer:
  • Category:
  • Datasheet:
  • SKU:
    10961637
  • Description:
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HYB25D256160CT-6
  • Manufacturer No:
    HYB25D256160CT-6
  • Manufacturer:
    Infineon
  • Category:
  • Datasheet:
    HYB25D256160CT-6
  • SKU:
    10961637
  • Description:

HYB25D256160CT-6 Details

HYB25D256160CT-6 Specification Parameters

  • Number of Functions: 1
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Temperature Grade: COMMERCIAL
  • JESD-609 Code: e0
  • Terminal Form: GULL WING
  • Supply Voltage: 2.5V
  • Operating Temperature (Max): 70°C
  • Reach Compliance Code: compliant
  • Supply Voltage-Max (Vsup): 2.7V
  • Output Characteristics: 3-STATE
  • Number of Terminals: 66
  • Supply Voltage-Min (Vsup): 2.3V
  • I/O Type: COMMON
  • Refresh Cycles: 8192
  • Standby Current-Max: 0.005A
  • Sequential Burst Length: 248
  • Memory Density: 268435456 bit
  • Organization: 16MX16
  • HTS Code: 8542.32.00.24
  • Memory IC Type: DDR DRAM
  • Supply Current-Max: 0.215mA
  • Number of Ports: 1
  • RoHS Status: Non-RoHS Compliant
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Memory Width: 16
  • Technology: CMOS
  • Power Supplies: 2.5V
  • Terminal Finish: Tin/Lead (Sn/Pb)
  • Terminal Pitch: 0.65mm
  • Seated Height-Max: 1.2mm
  • Pin Count: 66
  • Width: 10.16mm
  • Operating Mode: SYNCHRONOUS
  • Clock Frequency: 166MHz
  • Additional Feature: AUTO/SELF REFRESH
  • Length: 22.22mm
  • Interleaved Burst Length: 248
  • Access Time (Max): 0.7 ns
  • Subcategory: DRAMs
  • Access Mode: FOUR BANK PAGE BURST
  • JESD-30 Code: R-PDSO-G66

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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