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- Manufacturer No：IGB30N60H3ATMA1
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Single
- Datasheet：IGB30N60H3ATMA1
- SKU：2660646
- Description：Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263
User Guide
User Guide
IGB30N60H3ATMA1 Details
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263
IGB30N60H3ATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 4
- Qualification Status: Not Qualified
- Factory Lead Time: 16 Weeks
- Terminal Finish: Tin (Sn)
- Transistor Element Material: SILICON
- Input Type: Standard
- Terminal Position: SINGLE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Collector (Ic) (Max): 60A
- Turn On Time: 40 ns
- Transistor Application: POWER CONTROL
- Operating Temperature: -40°C~175°C TJ
- Power - Max: 187W
- Turn Off Time-Nom (toff): 262 ns
- Td (on/off) @ 25°C: 18ns/207ns
- Switching Energy: 1.17mJ
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- Terminal Form: GULL WING
- Reach Compliance Code: not_compliant
- Published: 2005
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- JESD-30 Code: R-PSSO-G2
- Polarity/Channel Type: N-CHANNEL
- Case Connection: COLLECTOR
- Current - Collector Pulsed (Icm): 120A
- IGBT Type: Trench Field Stop
- Series: TrenchStop?
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Gate Charge: 165nC
- Test Condition: 400V, 30A, 10.5 Ω, 15V
- Base Part Number: GB30N60
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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