IPAW60R280CEXKSA1Infineon
    Add to like
    Add to project list
    IPAW60R280CEXKSA1123
    • Manufacturer No：
      IPAW60R280CEXKSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      6448696
    • Description：
      N-Channel 600 V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPAW60R280CEXKSA1
    • Manufacturer No：
      IPAW60R280CEXKSA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPAW60R280CEXKSA1
    • SKU：
      6448696
    • Description：
      N-Channel 600 V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage

    User Guide

    User Guide

    IPAW60R280CEXKSA1 Details

    N-Channel 600 V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage

    IPAW60R280CEXKSA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Factory Lead Time: 18 Weeks
    • DS Breakdown Voltage-Min: 600V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 40A
    • Operating Temperature: -40°C~150°C TJ
    • Series: CoolMOS?
    • Drain-source On Resistance-Max: 0.28Ohm
    • Continuous Drain Current (ID): 19.3A
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
    • Avalanche Energy Rating (Eas): 284 mJ
    • Current - Continuous Drain (Id) @ 25°C: 19.3A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Published: 2013
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 600V
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JEDEC-95 Code: TO-220AB
    • FET Feature: Super Junction
    • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
    • Power Dissipation-Max: 32W Tc
    • Rds On (Max) @ Id, Vgs: 280m Ω @ 6.5A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 430μA
    • Package / Case: TO-220-3 Full Pack, Variant
    Search for similar products

    IPAW60R280CEXKSA1 Similar Products

    The four parts on the right have similar specifications to Infineon & IPAW60R280CEXKSA1

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via