Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:1799
- Qty Unit Price price
- 1 $5.792 $5.792
- 10 $5.734 $57.34
- 100 $5.677 $567.7
- 1000 $5.62 $5620
- 10000 $5.564 $55640
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IPB100N10S305ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB100N10S305ATMA1
- SKU：2665369
- Description：Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) TO-263
User Guide
User Guide
IPB100N10S305ATMA1 Details
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) TO-263
IPB100N10S305ATMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Lead Free: Contains Lead
- Max Dual Supply Voltage: 100V
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Power Dissipation: 300W
- Case Connection: DRAIN
- Fall Time (Typ): 20 ns
- Turn-Off Delay Time: 60 ns
- Rise Time: 17 ns
- Current - Continuous Drain (Id) @ 25°C: 100A Tc
- Drain-source On Resistance-Max: 0.0048Ohm
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Rds On (Max) @ Id, Vgs: 4.8m Ω @ 100A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 3
- Terminal Form: GULL WING
- Factory Lead Time: 14 Weeks
- Published: 2008
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- Part Status: Not For New Designs
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM): 400A
- Series: OptiMOS?
- Power Dissipation-Max: 300W Tc
- Turn On Delay Time: 34 ns
- Vgs(th) (Max) @ Id: 4V @ 240μA
- Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
Search for similar products
IPB100N10S305ATMA1 Similar Products
The four parts on the right have similar specifications to Infineon & IPB100N10S305ATMA1
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
