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IPB120N06S403ATMA1123
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IPB120N06S403ATMA1
  • Manufacturer No:
    IPB120N06S403ATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB120N06S403ATMA1
  • SKU:
    2668062
  • Description:
    N-Channel 60 V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3-2

IPB120N06S403ATMA1 Details

N-Channel 60 V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3-2

IPB120N06S403ATMA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Form: GULL WING
  • DS Breakdown Voltage-Min: 60V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Series: OptiMOS?
  • Pulsed Drain Current-Max (IDM): 480A
  • Power Dissipation-Max: 167W Tc
  • Vgs(th) (Max) @ Id: 4V @ 120μA
  • Avalanche Energy Rating (Eas): 392 mJ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Surface Mount: YES
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Drain to Source Voltage (Vdss): 60V
  • Published: 2009
  • Transistor Element Material: SILICON
  • Part Status: Discontinued
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Drain Current-Max (Abs) (ID): 120A
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Drain-source On Resistance-Max: 0.0028Ohm
  • Rds On (Max) @ Id, Vgs: 2.8m Ω @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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