IPB12CN10N GInfineon
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    IPB12CN10N G123
    Inventory:48
    • Qty Unit Price price
    • 1 $32.42 $32.42
    • 10 $32.099 $320.99
    • 100 $31.781 $3178.1
    • 1000 $31.466 $31466
    • 10000 $31.154 $311540

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    IPB12CN10N G
    • Manufacturer No：
      IPB12CN10N G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB12CN10N G
    • SKU：
      2659266
    • Description：
      MOSFET N-CH 100V 67A TO263-3

    User Guide

    User Guide

    IPB12CN10N G Details

    MOSFET N-CH 100V 67A TO263-3

    IPB12CN10N G Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Terminal Form: GULL WING
    • DS Breakdown Voltage-Min: 100V
    • Published: 2007
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Series: OptiMOS?
    • Additional Feature: FAST SWITCHING
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Pulsed Drain Current-Max (IDM): 268A
    • Drain-source On Resistance-Max: 0.0126Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Drain to Source Voltage (Vdss): 100V
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Reach Compliance Code: compliant
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Power Dissipation-Max: 125W Tc
    • Drain Current-Max (Abs) (ID): 67A
    • Current - Continuous Drain (Id) @ 25°C: 67A Tc
    • Vgs(th) (Max) @ Id: 4V @ 83μA
    • Avalanche Energy Rating (Eas): 154 mJ
    • Rds On (Max) @ Id, Vgs: 12.6m Ω @ 67A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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