IPB144N12N3GATMA1Infineon
    Add to like
    Add to project list
    IPB144N12N3GATMA1123
    Inventory:2729
    • Qty Unit Price price
    • 1 $338.765 $338.765
    • 10 $335.41 $3354.1
    • 100 $332.089 $33208.9
    • 1000 $328.8 $328800
    • 10000 $325.544 $3255440

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPB144N12N3GATMA1
    • Manufacturer No：
      IPB144N12N3GATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB144N12N3GATMA1
    • SKU：
      2663345
    • Description：
      Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R

    User Guide

    User Guide

    IPB144N12N3GATMA1 Details

    Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R

    IPB144N12N3GATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Pbfree Code: no
    • Terminal Form: GULL WING
    • Reach Compliance Code: not_compliant
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Fall Time (Typ): 4 ns
    • Turn On Delay Time: 16 ns
    • Turn-Off Delay Time: 24 ns
    • Power Dissipation-Max: 107W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Pulsed Drain Current-Max (IDM): 224A
    • Current - Continuous Drain (Id) @ 25°C: 56A Ta
    • Rds On (Max) @ Id, Vgs: 14.4m Ω @ 56A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Factory Lead Time: 13 Weeks
    • Published: 2008
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 120V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Rise Time: 9 ns
    • Series: OptiMOS?
    • Continuous Drain Current (ID): 56A
    • Avalanche Energy Rating (Eas): 90 mJ
    • Power Dissipation: 107W
    • Vgs(th) (Max) @ Id: 4V @ 61μA
    • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V
    Search for similar products

    IPB144N12N3GATMA1 Similar Products

    The four parts on the right have similar specifications to Infineon & IPB144N12N3GATMA1

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via