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- Manufacturer No：IPB160N04S203ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB160N04S203ATMA1
- SKU：2689094
- Description：N-Channel 40 V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
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User Guide
IPB160N04S203ATMA1 Details
N-Channel 40 V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
IPB160N04S203ATMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Drain to Source Voltage (Vdss): 40V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Reference Standard: AEC-Q101
- Drain Current-Max (Abs) (ID): 160A
- Additional Feature: ULTRA-LOW RESISTANCE
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
- Current - Continuous Drain (Id) @ 25°C: 160A Tc
- Pulsed Drain Current-Max (IDM): 640A
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Number of Terminations: 6
- Published: 2006
- Transistor Element Material: SILICON
- Part Status: Discontinued
- DS Breakdown Voltage-Min: 40V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: OptiMOS?
- Power Dissipation-Max: 300W Tc
- JESD-30 Code: R-PSSO-G6
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Avalanche Energy Rating (Eas): 810 mJ
- Drain-source On Resistance-Max: 0.0029Ohm
- Rds On (Max) @ Id, Vgs: 2.9m Ω @ 60A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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