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- Manufacturer No：IPB60R380P6ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB60R380P6ATMA1
- SKU：2663730
- Description：MOSFET N-CH 600V TO263-3
User Guide
User Guide
IPB60R380P6ATMA1 Details
MOSFET N-CH 600V TO263-3
IPB60R380P6ATMA1 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max: 83W Tc
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Avalanche Energy Rating (Eas): 210 mJ
- Current - Continuous Drain (Id) @ 25°C: 10.6A Tc
- Vgs(th) (Max) @ Id: 4.5V @ 320μA
- Number of Terminations: 2
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Lead Free: Contains Lead
- Published: 2008
- Terminal Finish: Tin (Sn)
- Max Dual Supply Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 29A
- Continuous Drain Current (ID): 10.6A
- Drain-source On Resistance-Max: 0.38Ohm
- Series: CoolMOS? P6
- Rds On (Max) @ Id, Vgs: 380m Ω @ 3.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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