IPD060N03LGATMA1Infineon
    Add to like
    Add to project list
    IPD060N03LGATMA1123
    Inventory:1477
    • Qty Unit Price price
    • 1 $164.023 $164.023
    • 10 $162.399 $1623.99
    • 100 $160.791 $16079.1
    • 1000 $159.199 $159199
    • 10000 $157.622 $1576220

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPD060N03LGATMA1
    • Manufacturer No：
      IPD060N03LGATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPD060N03LGATMA1
    • SKU：
      2666357
    • Description：
      N-KANAL POWER MOS

    User Guide

    User Guide

    IPD060N03LGATMA1 Details

    N-KANAL POWER MOS

    IPD060N03LGATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Pbfree Code: no
    • Qualification Status: Not Qualified
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Factory Lead Time: 18 Weeks
    • Gate to Source Voltage (Vgs): 20V
    • Max Dual Supply Voltage: 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 50A
    • Case Connection: DRAIN
    • Length: 6.73mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 5 ns
    • Rise Time: 3 ns
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Power Dissipation: 56W
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Avalanche Energy Rating (Eas): 60 mJ
    • Rds On (Max) @ Id, Vgs: 6m Ω @ 30A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Lead Free: Contains Lead
    • Terminal Form: GULL WING
    • Published: 2008
    • Transistor Element Material: SILICON
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Halogen Free: Halogen Free
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Height: 2.41mm
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn-Off Delay Time: 20 ns
    • Width: 6.22mm
    • Series: OptiMOS?
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    • Drain-source On Resistance-Max: 0.009Ohm
    • Power Dissipation-Max: 56W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
    Search for similar products

    IPD060N03LGATMA1 Similar Products

    The four parts on the right have similar specifications to Infineon & IPD060N03LGATMA1

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via