IPD50N03S2L06ATMA1Infineon
    Add to like
    Add to project list
    IPD50N03S2L06ATMA1123
    Inventory:2556
    • Qty Unit Price price
    • 1 $1.643 $1.643
    • 10 $1.626 $16.26
    • 100 $1.609 $160.9
    • 1000 $1.593 $1593
    • 10000 $1.577 $15770

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IPD50N03S2L06ATMA1
    • Manufacturer No：
      IPD50N03S2L06ATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPD50N03S2L06ATMA1
    • SKU：
      2664066
    • Description：
      Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

    User Guide

    User Guide

    IPD50N03S2L06ATMA1 Details

    Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

    IPD50N03S2L06ATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Pins: 3
    • Lead Free: Contains Lead
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • Max Dual Supply Voltage: 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 50A
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Pulsed Drain Current-Max (IDM): 200A
    • Turn-Off Delay Time: 40 ns
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Power Dissipation-Max: 136W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
    • Drain-source On Resistance-Max: 0.0092Ohm
    • Rds On (Max) @ Id, Vgs: 6.4m Ω @ 50A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Factory Lead Time: 10 Weeks
    • Terminal Form: GULL WING
    • Published: 2006
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Halogen Free: Halogen Free
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Turn On Delay Time: 10 ns
    • Fall Time (Typ): 15 ns
    • Rise Time: 30 ns
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Series: Automotive, AEC-Q101, OptiMOS?
    • Avalanche Energy Rating (Eas): 250 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Vgs(th) (Max) @ Id: 2V @ 85μA
    Search for similar products

    IPD50N03S2L06ATMA1 Similar Products

    The four parts on the right have similar specifications to Infineon & IPD50N03S2L06ATMA1

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via