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  • Manufacturer No:
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
  • Description:
    MOSFET N CH 500V 9.9A PG-TO252

IPD50R380CEBTMA1 Details

MOSFET N CH 500V 9.9A PG-TO252

IPD50R380CEBTMA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Published: 2014
  • Terminal Position: SINGLE
  • DS Breakdown Voltage-Min: 500V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Series: CoolMOS?
  • Drain Current-Max (Abs) (ID): 14.1A
  • Power Dissipation-Max: 73W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
  • Avalanche Energy Rating (Eas): 173 mJ
  • Rds On (Max) @ Id, Vgs: 380m Ω @ 3.2A, 13V
  • Number of Terminations: 2
  • Number of Elements: 1
  • Surface Mount: YES
  • Pbfree Code: no
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 500V
  • Part Status: Discontinued
  • Packaging: Cut Tape (CT)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 13V
  • FET Feature: Super Junction
  • Drain-source On Resistance-Max: 0.38Ohm
  • Current - Continuous Drain (Id) @ 25°C: 9.9A Tc
  • Pulsed Drain Current-Max (IDM): 32.4A
  • Vgs(th) (Max) @ Id: 3.5V @ 260μA
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.


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