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- Manufacturer No：IPD50R650CEAUMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPD50R650CEAUMA1
- SKU：2668417
- Description：CONSUMER
User Guide
User Guide
IPD50R650CEAUMA1 Details
CONSUMER
IPD50R650CEAUMA1 Specification Parameters
- Part Status: Active
- Number of Terminations: 2
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 3
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2008
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Transistor Application: SWITCHING
- JESD-30 Code: R-PSSO-G2
- Rise Time: 5ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 13 ns
- Continuous Drain Current (ID): 6.1A
- Weight: 3.949996g
- Power Dissipation: 47W
- Rds On Max: 650 mΩ
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Min Operating Temperature: -55°C
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Terminal Form: GULL WING
- Max Operating Temperature: 150°C
- Factory Lead Time: 18 Weeks
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Polarity/Channel Type: N-CHANNEL
- Turn On Delay Time: 6 ns
- Turn-Off Delay Time: 27 ns
- Drain to Source Resistance: 650mOhm
- Package / Case: TO-252-3
- Max Power Dissipation: 47W
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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