IPI08CN10N GInfineon
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    IPI08CN10N G123
    Inventory:48
    • Qty Unit Price price
    • 1 $5638.882 $5638.882
    • 10 $5583.051 $55830.51
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    • 1000 $5473.042 $5473042
    • 10000 $5418.853 $54188530

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    IPI08CN10N G
    • Manufacturer No：
      IPI08CN10N G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPI08CN10N G
    • SKU：
      2669666
    • Description：
      MOSFET N-CH 100V 95A TO262-3

    User Guide

    User Guide

    IPI08CN10N G Details

    MOSFET N-CH 100V 95A TO262-3

    IPI08CN10N G Specification Parameters

    • Surface Mount: NO
    • Mounting Type: Through Hole
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Packaging: Tube
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • DS Breakdown Voltage-Min: 100V
    • Published: 2008
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JESD-30 Code: R-PSIP-T3
    • Series: OptiMOS?
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Power Dissipation-Max: 167W Tc
    • Current - Continuous Drain (Id) @ 25°C: 95A Tc
    • Avalanche Energy Rating (Eas): 262 mJ
    • Rds On (Max) @ Id, Vgs: 8.5m Ω @ 95A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Drain to Source Voltage (Vdss): 100V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Reach Compliance Code: compliant
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
    • Drain Current-Max (Abs) (ID): 95A
    • Pulsed Drain Current-Max (IDM): 380A
    • Drain-source On Resistance-Max: 0.0085Ohm
    • Vgs(th) (Max) @ Id: 4V @ 130μA
    • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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