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- Manufacturer No：IPI120N10S405AKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPI120N10S405AKSA1
- SKU：2668430
- Description：N-Channel 100 V 120A (Tc) 190W (Tc) Through Hole PG-TO262-3-1
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IPI120N10S405AKSA1 Details
N-Channel 100 V 120A (Tc) 190W (Tc) Through Hole PG-TO262-3-1
IPI120N10S405AKSA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2013
- Max Dual Supply Voltage: 100V
- Reach Compliance Code: not_compliant
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10ns
- Case Connection: DRAIN
- Fall Time (Typ): 35 ns
- Continuous Drain Current (ID): 120A
- Current - Continuous Drain (Id) @ 25°C: 120A Tc
- Pulsed Drain Current-Max (IDM): 480A
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Lead Free: Contains Lead
- Factory Lead Time: 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 15 ns
- Turn-Off Delay Time: 30 ns
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Series: Automotive, AEC-Q101, OptiMOS?
- Power Dissipation-Max: 190W Tc
- Vgs(th) (Max) @ Id: 3.5V @ 120μA
- Rds On (Max) @ Id, Vgs: 5.3m Ω @ 100A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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