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IPL65R1K5C6SATMA1123
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IPL65R1K5C6SATMA1
  • Manufacturer No:
    IPL65R1K5C6SATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPL65R1K5C6SATMA1
  • SKU:
    2660946
  • Description:
    N-Channel 650 V 3A (Tc) 26.6W (Tc) Surface Mount

IPL65R1K5C6SATMA1 Details

N-Channel 650 V 3A (Tc) 26.6W (Tc) Surface Mount

IPL65R1K5C6SATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Terminal Position: DUAL
  • Lead Free: Contains Lead
  • Reach Compliance Code: not_compliant
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Element Configuration: Single
  • Terminal Form: NO LEAD
  • Technology: MOSFET (Metal Oxide)
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • Operating Temperature: -40°C~150°C TJ
  • Max Dual Supply Voltage: 650V
  • Weight: 75.891673mg
  • Rise Time: 5.9 ns
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • JESD-30 Code: R-PDSO-N5
  • Avalanche Energy Rating (Eas): 26 mJ
  • Series: CoolMOS? C6
  • Rds On (Max) @ Id, Vgs: 1.5 Ω @ 1A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 8
  • Continuous Drain Current (ID): 3A
  • Number of Terminations: 5
  • Published: 2008
  • Terminal Finish: Tin (Sn)
  • Factory Lead Time: 18 Weeks
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Drain to Source Breakdown Voltage: 650V
  • Package / Case: 8-PowerTDFN
  • Turn-Off Delay Time: 33 ns
  • Turn On Delay Time: 7.7 ns
  • Current - Continuous Drain (Id) @ 25°C: 3A Tc
  • Fall Time (Typ): 18.2 ns
  • Vgs(th) (Max) @ Id: 3.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • Power Dissipation-Max: 26.6W Tc

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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