IPN60R360P7SATMA1Infineon
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    IPN60R360P7SATMA1
    • Manufacturer No：
      IPN60R360P7SATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPN60R360P7SATMA1
    • SKU：
      2664854
    • Description：
      MOSFET N-CHANNEL 600V 9A SOT223

    User Guide

    User Guide

    IPN60R360P7SATMA1 Details

    MOSFET N-CHANNEL 600V 9A SOT223

    IPN60R360P7SATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Published: 2014
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 600V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Power Dissipation: 7W
    • Height: 1.8mm
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 9A
    • Turn On Delay Time: 8 ns
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Series: CoolMOS? P7
    • Package / Case: TO-261-3
    • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
    • Power Dissipation-Max: 7W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Max Junction Temperature (Tj): 150°C
    • Reach Compliance Code: not_compliant
    • Terminal Finish: Tin (Sn)
    • Factory Lead Time: 18 Weeks
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • JESD-30 Code: R-PDSO-G3
    • Turn-Off Delay Time: 42 ns
    • Current - Continuous Drain (Id) @ 25°C: 9A Tc
    • Drain-source On Resistance-Max: 0.36Ohm
    • Vgs(th) (Max) @ Id: 4V @ 140μA
    • Rds On (Max) @ Id, Vgs: 360m Ω @ 2.7A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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