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IPP50R399CPXKSA1
  • Manufacturer No:
    IPP50R399CPXKSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPP50R399CPXKSA1
  • SKU:
    2693616
  • Description:
    N-Channel 500 V 9A (Ta) 83W (Tc) Through Hole PG-TO220-3

IPP50R399CPXKSA1 Details

N-Channel 500 V 9A (Ta) 83W (Tc) Through Hole PG-TO220-3

IPP50R399CPXKSA1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Published: 2008
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Max Dual Supply Voltage: 500V
  • Part Status: Not For New Designs
  • Operating Temperature: -55°C~150°C TJ
  • Width: 4.57mm
  • Technology: MOSFET (Metal Oxide)
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • JEDEC-95 Code: TO-220AB
  • Continuous Drain Current (ID): 9A
  • Fall Time (Typ): 14 ns
  • Turn-Off Delay Time: 80 ns
  • Series: CoolMOS?
  • Power Dissipation-Max: 83W Tc
  • Height: 15.95mm
  • Avalanche Energy Rating (Eas): 215 mJ
  • Vgs(th) (Max) @ Id: 3.5V @ 330μA
  • Rds On (Max) @ Id, Vgs: 399m Ω @ 4.9A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 500V
  • Gate to Source Voltage (Vgs): 20V
  • Pulsed Drain Current-Max (IDM): 20A
  • Case Connection: ISOLATED
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Drain Current-Max (Abs) (ID): 9A
  • Turn On Delay Time: 35 ns
  • Rise Time: 14 ns
  • Subcategory: FET General Purpose Powers
  • Power Dissipation: 83W
  • Length: 10.36mm
  • Current - Continuous Drain (Id) @ 25°C: 9A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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