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- Manufacturer No：IPU60R1K0CEAKMA2
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPU60R1K0CEAKMA2
- SKU：2704752
- Description：N-Channel 600 V 4.3A (Tc) 61W (Tc) Through Hole PG-TO251-3
User Guide
User Guide
IPU60R1K0CEAKMA2 Details
N-Channel 600 V 4.3A (Tc) 61W (Tc) Through Hole PG-TO251-3
IPU60R1K0CEAKMA2 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2008
- Terminal Finish: Tin (Sn)
- Factory Lead Time: 18 Weeks
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Operating Temperature: -40°C~150°C TJ
- JESD-30 Code: R-PSIP-T3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Series: CoolMOS? CE
- Avalanche Energy Rating (Eas): 46 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Power Dissipation-Max: 61W Tc
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Lead Free: Contains Lead
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Max Dual Supply Voltage: 600V
- FET Type: N-Channel
- Pulsed Drain Current-Max (IDM): 12A
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drain-source On Resistance-Max: 1Ohm
- Continuous Drain Current (ID): 4.3A
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
- Vgs(th) (Max) @ Id: 3.5V @ 130μA
- Rds On (Max) @ Id, Vgs: 1 Ω @ 1.5A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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