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- Manufacturer No：IPW65R080CFDAFKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPW65R080CFDAFKSA1
- SKU：2671142
- Description：Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247
User Guide
User Guide
IPW65R080CFDAFKSA1 Details
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247
IPW65R080CFDAFKSA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage: 650V
- JESD-30 Code: R-PSFM-T3
- Package / Case: TO-247-3
- Turn-Off Delay Time: 85 ns
- Drain-source On Resistance-Max: 0.08Ohm
- Power Dissipation-Max: 391W Tc
- Continuous Drain Current (ID): 43.3A
- Rds On (Max) @ Id, Vgs: 80m Ω @ 17.6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2008
- Terminal Finish: Tin (Sn)
- Factory Lead Time: 18 Weeks
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Additional Feature: HIGH RELIABILITY
- Operating Temperature: -40°C~150°C TJ
- Max Dual Supply Voltage: 650V
- Turn On Delay Time: 20 ns
- Fall Time (Typ): 6 ns
- Rise Time: 18ns
- Series: Automotive, AEC-Q101, CoolMOS?
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 43.3A Tc
- Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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