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- Manufacturer No：IRF2804PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF2804PBF
- SKU：2680523
- Description：Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
User Guide
User Guide
IRF2804PBF Details
Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
IRF2804PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 40V
- Published: 2003
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- Width: 4.826mm
- Nominal Vgs: 4 V
- Fall Time (Typ): 130 ns
- Height: 9.017mm
- Current - Continuous Drain (Id) @ 25°C: 75A Tc
- Continuous Drain Current (ID): 270A
- Recovery Time: 84 ns
- Additional Feature: AVALANCHE RATED, ULTRA LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Voltage - Rated DC: 40V
- Dual Supply Voltage: 40V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Current Rating: 75A
- Turn On Delay Time: 13 ns
- Rise Time: 120 ns
- Turn-Off Delay Time: 130 ns
- Power Dissipation-Max: 300W Tc
- Resistance: 2.3Ohm
- Power Dissipation: 330W
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Length: 10.6426mm
- Avalanche Energy Rating (Eas): 540 mJ
- Rds On (Max) @ Id, Vgs: 2.3m Ω @ 75A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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