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- Manufacturer No：IRF2807STRLPBF
- Manufacturer：
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：2705385
- Description：MOSFET N-CH 75V 82A D2PAK
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- 10 $2719.997 $27199.97
- 100 $2693.066 $269306.6
- 1000 $2666.401 $2666401
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- Manufacturer No：IRF2807STRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF2807STRLPBF
- SKU：2705385
- Description：MOSFET N-CH 75V 82A D2PAK
User Guide
User Guide
IRF2807STRLPBF Details
MOSFET N-CH 75V 82A D2PAK
IRF2807STRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Voltage - Rated DC: 75V
- Dual Supply Voltage: 75V
- Published: 2002
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain Current-Max (Abs) (ID): 75A
- Width: 9.65mm
- Height: 4.826mm
- Nominal Vgs: 4 V
- Fall Time (Typ): 48 ns
- Turn-Off Delay Time: 49 ns
- Current Rating: 82A
- Rise Time: 64 ns
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 82A Tc
- Rds On (Max) @ Id, Vgs: 13m Ω @ 43A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 75V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Recovery Time: 150 ns
- Series: HEXFET?
- Turn On Delay Time: 13 ns
- Length: 10.668mm
- Lead Free: Contains Lead, Lead Free
- Pulsed Drain Current-Max (IDM): 280A
- Continuous Drain Current (ID): 82A
- Power Dissipation: 170W
- Power Dissipation-Max: 230W Tc
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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