IRF3205LPBFInfineon
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    Inventory:1326
    • Qty Unit Price price
    • 1 $1.578 $1.578
    • 10 $1.562 $15.62
    • 100 $1.546 $154.6
    • 1000 $1.53 $1530
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    IRF3205LPBF
    • Manufacturer No：
      IRF3205LPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF3205LPBF
    • SKU：
      2691677
    • Description：
      MOSFET N-CH 55V 110A TO-262

    User Guide

    User Guide

    IRF3205LPBF Details

    MOSFET N-CH 55V 110A TO-262

    IRF3205LPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2002
    • Power Dissipation: 200W
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Voltage - Rated DC: 55V
    • Case Connection: DRAIN
    • Turn-Off Delay Time: 50 ns
    • Drain Current-Max (Abs) (ID): 75A
    • Height: 9.65mm
    • Turn On Delay Time: 14 ns
    • Current Rating: 110A
    • Fall Time (Typ): 65 ns
    • Drain-source On Resistance-Max: 0.008Ohm
    • Current - Continuous Drain (Id) @ 25°C: 110A Tc
    • Rise Time: 101 ns
    • Avalanche Energy Rating (Eas): 264 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Width: 4.826mm
    • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
    • Continuous Drain Current (ID): 110A
    • Length: 10.668mm
    • Power Dissipation-Max: 200W Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    • Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
    • Rds On (Max) @ Id, Vgs: 8m Ω @ 62A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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