IRF520NPBFInfineon
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    IRF520NPBF123
    Inventory:2727
    • Qty Unit Price price
    • 1 $1337.179 $1337.179
    • 10 $1323.939 $13239.39
    • 100 $1310.83 $131083
    • 1000 $1297.851 $1297851
    • 10000 $1285 $12850000

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    IRF520NPBF
    • Manufacturer No：
      IRF520NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF520NPBF
    • SKU：
      2684816
    • Description：
      MOSFET N-CH 100V 9.7A TO-220AB

    User Guide

    User Guide

    IRF520NPBF Details

    MOSFET N-CH 100V 9.7A TO-220AB

    IRF520NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Lead Pitch: 2.54mm
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Drain Current-Max (Abs) (ID): 9.5A
    • Fall Time (Typ): 23 ns
    • Nominal Vgs: 4 V
    • Drain-source On Resistance-Max: 0.2Ohm
    • Current Rating: 9.7A
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Power Dissipation-Max: 48W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
    • Rds On (Max) @ Id, Vgs: 200m Ω @ 5.7A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Height: 15.24mm
    • Recovery Time: 150 ns
    • Turn On Delay Time: 4.5 ns
    • Turn-Off Delay Time: 32 ns
    • Rise Time: 23 ns
    • Power Dissipation: 48W
    • Continuous Drain Current (ID): 9.7A
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Width: 4.69mm
    • Length: 10.5156mm
    • Current - Continuous Drain (Id) @ 25°C: 9.7A Tc
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    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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