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- Manufacturer No：IRF540ZL
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF540ZL
- SKU：2707538
- Description：MOSFET N-CH 100V 36A TO-262
User Guide
User Guide
IRF540ZL Details
MOSFET N-CH 100V 36A TO-262
IRF540ZL Specification Parameters
- Surface Mount: NO
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Number of Terminations: 3
- JESD-609 Code: e0
- DS Breakdown Voltage-Min: 100V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Transistor Element Material: SILICON
- Published: 2003
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- JESD-30 Code: R-PSIP-T3
- Drain Current-Max (Abs) (ID): 36A
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas): 120 mJ
- Power Dissipation-Max: 92W Tc
- Drain-source On Resistance-Max: 0.0265Ohm
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Packaging: Tube
- Qualification Status: Not Qualified
- Drain to Source Voltage (Vdss): 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 225
- Case Connection: DRAIN
- Series: HEXFET?
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Pulsed Drain Current-Max (IDM): 140A
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 36A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Rds On (Max) @ Id, Vgs: 26.5m Ω @ 22A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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