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IRF6607TR1123
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IRF6607TR1
  • Manufacturer No:
    IRF6607TR1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF6607TR1
  • SKU:
    2705021
  • Description:
    MOSFET N-CH 30V 27A DIRECTFET

IRF6607TR1 Details

MOSFET N-CH 30V 27A DIRECTFET

IRF6607TR1 Specification Parameters

  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Lead Free: Contains Lead
  • Min Operating Temperature: -40°C
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • Threshold Voltage: 2V
  • Technology: MOSFET (Metal Oxide)
  • Rise Time: 8ns
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Vgs (Max): ±12V
  • Power Dissipation: 3.6W
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 7V
  • Rds On Max: 3.3 mΩ
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 27A Ta 94A Tc
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Part Status: Obsolete
  • Contact Plating: Silver
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2005
  • Number of Pins: 7
  • Drain to Source Breakdown Voltage: 30V
  • FET Type: N-Channel
  • Operating Temperature: -40°C~150°C TJ
  • Turn On Delay Time: 60 ns
  • Fall Time (Typ): 13 ns
  • Continuous Drain Current (ID): 27A
  • Turn-Off Delay Time: 32 ns
  • Drain to Source Resistance: 3.3mOhm
  • Package / Case: DirectFET? Isometric MT
  • Supplier Device Package: DIRECTFET? MT
  • Power Dissipation-Max: 3.6W Ta 42W Tc
  • Input Capacitance: 6.93nF
  • Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 15V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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