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- Manufacturer No：IRF6612TR1PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF6612TR1PBF
- SKU：2679917
- Description：MOSFET N-CH 30V 24A DIRECTFET
User Guide
User Guide
IRF6612TR1PBF Details
MOSFET N-CH 30V 24A DIRECTFET
IRF6612TR1PBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- REACH SVHC: No SVHC
- Max Operating Temperature: 150°C
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 30V
- Length: 6.35mm
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -40°C~150°C TJ
- Turn On Delay Time: 15 ns
- Series: HEXFET?
- Turn-Off Delay Time: 21 ns
- Resistance: 3.3MOhm
- Nominal Vgs: 1.8 V
- Vgs(th) (Max) @ Id: 2.25V @ 250μA
- Power Dissipation-Max: 2.8W Ta 89W Tc
- Drain to Source Resistance: 4.4mOhm
- Supplier Device Package: DIRECTFET? MX
- Rds On Max: 3.3 mΩ
- Current - Continuous Drain (Id) @ 25°C: 24A Ta 136A Tc
- Input Capacitance: 3.97nF
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Min Operating Temperature: -40°C
- Number of Pins: 5
- Published: 2006
- Voltage - Rated DC: 30V
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Current Rating: 24A
- Continuous Drain Current (ID): 19A
- Fall Time (Typ): 4.8 ns
- Width: 5.05mm
- Power Dissipation: 89W
- Package / Case: DirectFET? Isometric MX
- Height: 506μm
- Rise Time: 52ns
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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