IRF6643TRPBFInfineon
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    IRF6643TRPBF
    • Manufacturer No：
      IRF6643TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF6643TRPBF
    • SKU：
      2698458
    • Description：
      MOSFET N-CH 150V 6.2A DIRECTFET

    User Guide

    User Guide

    IRF6643TRPBF Details

    MOSFET N-CH 150V 6.2A DIRECTFET

    IRF6643TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Number of Pins: 5
    • Published: 2006
    • Transistor Element Material: SILICON
    • Terminal Position: BOTTOM
    • JESD-609 Code: e1
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Continuous Drain Current (ID): 6.2A
    • Fall Time (Typ): 4.4 ns
    • Power Dissipation: 89W
    • JESD-30 Code: R-XBCC-N3
    • Width: 5.0546mm
    • Vgs(th) (Max) @ Id: 4.9V @ 150μA
    • Current - Continuous Drain (Id) @ 25°C: 6.2A Ta 35A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Length: 6.35mm
    • Height: 508μm
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Rise Time: 5 ns
    • Turn-Off Delay Time: 13 ns
    • Pulsed Drain Current-Max (IDM): 76A
    • Turn On Delay Time: 9.2 ns
    • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
    • Power Dissipation-Max: 2.8W Ta 89W Tc
    • Package / Case: DirectFET? Isometric MZ
    • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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