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- Manufacturer No：IRF6691TR1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF6691TR1
- SKU：2695132
- Description：MOSFET N-CH 20V 32A DIRECTFET
User Guide
User Guide
IRF6691TR1 Details
MOSFET N-CH 20V 32A DIRECTFET
IRF6691TR1 Specification Parameters
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: Non-RoHS Compliant
- Lead Free: Contains Lead
- Termination: SMD/SMT
- Threshold Voltage: 2.5V
- Gate to Source Voltage (Vgs): 12V
- Published: 2005
- Voltage - Rated DC: 20V
- Drain to Source Breakdown Voltage: 20V
- FET Type: N-Channel
- Operating Temperature: -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Current Rating: 32A
- Series: HEXFET?
- Vgs (Max): ±12V
- Turn On Delay Time: 23 ns
- Forward Voltage: 650mV
- Rise Time: 95ns
- Power Dissipation-Max: 2.8W Ta 89W Tc
- Current - Continuous Drain (Id) @ 25°C: 32A Ta 180A Tc
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 10V
- Mount: Surface Mount
- Radiation Hardening: No
- Part Status: Obsolete
- Min Operating Temperature: -40°C
- REACH SVHC: No SVHC
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Max Operating Temperature: 150°C
- Number of Pins: 7
- Drain to Source Voltage (Vdss): 20V
- Dual Supply Voltage: 20V
- Technology: MOSFET (Metal Oxide)
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 25 ns
- Continuous Drain Current (ID): 32A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Reverse Recovery Time: 32 ns
- Nominal Vgs: 2.5 V
- Power Dissipation: 2.8W
- Drain to Source Resistance: 1.8mOhm
- Package / Case: DirectFET? Isometric MT
- Supplier Device Package: DIRECTFET? MT
- Rds On Max: 1.8 mΩ
- Input Capacitance: 6.58nF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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