IRF6795MTR1PBFInfineon
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    IRF6795MTR1PBF
    • Manufacturer No：
      IRF6795MTR1PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF6795MTR1PBF
    • SKU：
      2702233
    • Description：
      MOSFET N-CH 25V 32A DIRECTFET

    User Guide

    User Guide

    IRF6795MTR1PBF Details

    MOSFET N-CH 25V 32A DIRECTFET

    IRF6795MTR1PBF Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Number of Pins: 5
    • Published: 2010
    • Dual Supply Voltage: 25V
    • Gate to Source Voltage (Vgs): 20V
    • Length: 6.35mm
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Continuous Drain Current (ID): 32A
    • Fall Time (Typ): 11 ns
    • Turn-Off Delay Time: 16 ns
    • Resistance: 1.8MOhm
    • Width: 5.05mm
    • Additional Feature: LOW CONDUCTION LOSS
    • JESD-30 Code: R-XBCC-N3
    • Height: 506μm
    • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 32A Ta 160A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 13V
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drain to Source Breakdown Voltage: 25V
    • Transistor Element Material: SILICON
    • Terminal Position: BOTTOM
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Terminal Finish: TIN SILVER COPPER
    • Series: HEXFET?
    • Turn On Delay Time: 16 ns
    • Rise Time: 27 ns
    • Power Dissipation: 2.8W
    • Recovery Time: 41 ns
    • Nominal Vgs: 1.8 V
    • Package / Case: DirectFET? Isometric MX
    • Vgs(th) (Max) @ Id: 2.35V @ 100μA
    • Rds On (Max) @ Id, Vgs: 1.8m Ω @ 32A, 10V
    • Power Dissipation-Max: 2.8W Ta 75W Tc
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    Infineon
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