IRF7101TRPBFInfineon
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    IRF7101TRPBF
    • Manufacturer No：
      IRF7101TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7101TRPBF
    • SKU：
      2708556
    • Description：
      MOSFET 2N-CH 20V 3.5A 8-SOIC

    User Guide

    User Guide

    IRF7101TRPBF Details

    MOSFET 2N-CH 20V 3.5A 8-SOIC

    IRF7101TRPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Gate to Source Voltage (Vgs): 12V
    • Element Configuration: Dual
    • Power Rating: 2W
    • Power Dissipation: 2W
    • Drain to Source Breakdown Voltage: 20V
    • Part Status: Not For New Designs
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Transistor Application: SWITCHING
    • Subcategory: FET General Purpose Power
    • Rise Time: 10 ns
    • Current Rating: 3.5A
    • Fall Time (Typ): 30 ns
    • Pulsed Drain Current-Max (IDM): 14A
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • FET Type: 2 N-Channel (Dual)
    • Turn-Off Delay Time: 24 ns
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
    • Base Part Number: IRF7101PBF
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Max Power Dissipation: 2W
    • Voltage - Rated DC: 20V
    • Dual Supply Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Published: 1997
    • Operating Mode: ENHANCEMENT MODE
    • Resistance: 100mOhm
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Continuous Drain Current (ID): 3.5A
    • Width: 3.9878mm
    • Height: 1.4986mm
    • Turn On Delay Time: 7 ns
    • FET Feature: Logic Level Gate
    • Nominal Vgs: 3 V
    • Length: 4.9784mm
    • Row Spacing: 6.3 mm
    • Rds On (Max) @ Id, Vgs: 100m Ω @ 1.8A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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