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- Manufacturer No：IRF7458PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7458PBF
- SKU：2702669
- Description：HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 14A Ta 14A 2.5W Ta 30V
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User Guide
IRF7458PBF Details
HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 14A Ta 14A 2.5W Ta 30V
IRF7458PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drain to Source Voltage (Vdss): 30V
- Part Status: Discontinued
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- JESD-30 Code: R-PDSO-G8
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Series: HEXFET?
- Pulsed Drain Current-Max (IDM): 110A
- JEDEC-95 Code: MS-012AA
- Current - Continuous Drain (Id) @ 25°C: 14A Ta
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On): 10V 16V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Surface Mount: YES
- Number of Terminations: 8
- Packaging: Tube
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Published: 2004
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain Current-Max (Abs) (ID): 14A
- Additional Feature: AVALANCHE RATED
- Power Dissipation-Max: 2.5W Ta
- Drain-source On Resistance-Max: 0.008Ohm
- Avalanche Energy Rating (Eas): 280 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
- Rds On (Max) @ Id, Vgs: 8m Ω @ 14A, 16V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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