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- Manufacturer No：IRF7467TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7467TRPBF
- SKU：2680002
- Description：MOSFET N-CH 30V 11A 8-SOIC
User Guide
User Guide
IRF7467TRPBF Details
MOSFET N-CH 30V 11A 8-SOIC
IRF7467TRPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Rise Time: 2.5ns
- Continuous Drain Current (ID): 11A
- Fall Time (Typ): 4 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Turn-Off Delay Time: 19 ns
- Power Dissipation-Max: 2.5W Ta
- Current - Continuous Drain (Id) @ 25°C: 11A Ta
- Rds On Max: 12 mΩ
- Input Capacitance: 2.53nF
- Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Max Operating Temperature: 150°C
- Drain to Source Voltage (Vdss): 30V
- Published: 2004
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 2.5W
- Series: HEXFET?
- Drain to Source Resistance: 12mOhm
- Vgs (Max): ±12V
- Supplier Device Package: 8-SO
- Turn On Delay Time: 7.8 ns
- Drive Voltage (Max Rds On,Min Rds On): 2.8V 10V
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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