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- Manufacturer No：IRF7665S2TR1PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7665S2TR1PBF
- SKU：2711192
- Description：MOSFET N-CH 100V 4.1A DFET SB
User Guide
User Guide
IRF7665S2TR1PBF Details
MOSFET N-CH 100V 4.1A DFET SB
IRF7665S2TR1PBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Vgs (Max): ±20V
- Length: 4.826mm
- Turn On Delay Time: 3.8 ns
- Fall Time (Typ): 3.6 ns
- Turn-Off Delay Time: 7.1 ns
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Continuous Drain Current (ID): 14.4mA
- Vgs(th) (Max) @ Id: 5V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 4.1A Ta 14.4A Tc
- Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Published: 2009
- Element Configuration: Single
- Height: 508μm
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Power Dissipation: 2.4W
- Nominal Vgs: 4 V
- Width: 3.95mm
- Resistance: 62mOhm
- Drain to Source Resistance: 51mOhm
- Rds On Max: 62 mΩ
- Rise Time: 6.4ns
- Package / Case: DirectFET? Isometric SB
- Power Dissipation-Max: 2.4W Ta 30W Tc
- Input Capacitance: 515pF
- Supplier Device Package: DIRECTFET SB
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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