IRF7779L2TRPBFInfineon
    Add to like
    Add to project list
    IRF7779L2TRPBF123
    Inventory:4142
    • Qty Unit Price price
    • 1 $6.516 $6.516
    • 10 $6.451 $64.51
    • 100 $6.387 $638.7
    • 1000 $6.323 $6323
    • 10000 $6.26 $62600

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IRF7779L2TRPBF
    • Manufacturer No：
      IRF7779L2TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7779L2TRPBF
    • SKU：
      2695737
    • Description：
      MOSFET N-CH 150V DIRECTFET L8

    User Guide

    User Guide

    IRF7779L2TRPBF Details

    MOSFET N-CH 150V DIRECTFET L8

    IRF7779L2TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 9
    • Published: 2009
    • Transistor Element Material: SILICON
    • Number of Pins: 11
    • JESD-609 Code: e1
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 12 ns
    • Width: 7.1mm
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Power Dissipation: 125W
    • Turn-Off Delay Time: 36 ns
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Avalanche Energy Rating (Eas): 270 mJ
    • Rds On (Max) @ Id, Vgs: 11m Ω @ 40A, 10V
    • Power Dissipation-Max: 3.3W Ta 125W Tc
    • Current - Continuous Drain (Id) @ 25°C: 375A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Terminal Position: BOTTOM
    • Height: 508μm
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 11A
    • Series: HEXFET?
    • Length: 9.144mm
    • Turn On Delay Time: 16 ns
    • Rise Time: 19 ns
    • Drain Current-Max (Abs) (ID): 67A
    • Pulsed Drain Current-Max (IDM): 270A
    • Package / Case: DirectFET? Isometric L8
    • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
    • JESD-30 Code: R-XBCC-N9
    Search for similar products

    IRF7779L2TRPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF7779L2TRPBF

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via