IRF8313PBFInfineon
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    IRF8313PBF123
    • Manufacturer No：
      IRF8313PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
    • SKU：
      3623234
    • Description：
      Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO
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    IRF8313PBF
    • Manufacturer No：
      IRF8313PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF8313PBF
    • SKU：
      3623234
    • Description：
      Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO

    User Guide

    User Guide

    IRF8313PBF Details

    Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO

    IRF8313PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Factory Lead Time: 6 Weeks
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Power - Max: 2W
    • Drain to Source Voltage (Vdss): 30V
    • Part Status: Discontinued
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Temperature: -55°C~175°C TJ
    • JESD-30 Code: R-PDSO-G8
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • FET Type: 2 N-Channel (Dual)
    • Drain Current-Max (Abs) (ID): 9.7A
    • JEDEC-95 Code: MS-012AA
    • Pulsed Drain Current-Max (IDM): 81A
    • Drain-source On Resistance-Max: 0.0155Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
    • Base Part Number: IRF8313PBF
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 8
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Transistor Element Material: SILICON
    • Power Dissipation-Max (Abs): 2W
    • DS Breakdown Voltage-Min: 30V
    • Published: 2004
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • FET Feature: Logic Level Gate
    • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • Current - Continuous Drain (Id) @ 25°C: 9.7A
    • Vgs(th) (Max) @ Id: 2.35V @ 25μA
    • Avalanche Energy Rating (Eas): 46 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
    • Rds On (Max) @ Id, Vgs: 15.5m Ω @ 9.7A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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