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- Manufacturer No：IRF8910PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF8910PBF
- SKU：2690666
- Description：Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
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User Guide
IRF8910PBF Details
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
IRF8910PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 8
- Qualification Status: Not Qualified
- Transistor Element Material: SILICON
- Drain Current-Max (Abs) (ID): 10A
- Drain to Source Voltage (Vdss): 20V
- Part Status: Discontinued
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- JESD-30 Code: R-PDSO-G8
- Series: HEXFET?
- FET Type: 2 N-Channel (Dual)
- JEDEC-95 Code: MS-012AA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Drain-source On Resistance-Max: 0.0134Ohm
- Rds On (Max) @ Id, Vgs: 13.4m Ω @ 10A, 10V
- Base Part Number: IRF8910PBF
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Terminal Form: GULL WING
- Power - Max: 2W
- Current - Continuous Drain (Id) @ 25°C: 10A
- DS Breakdown Voltage-Min: 20V
- Published: 2004
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM): 82A
- Vgs(th) (Max) @ Id: 2.55V @ 250μA
- Avalanche Energy Rating (Eas): 19 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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